| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming and machining an oxide conductive film, low in resistance and easy to machine. SOLUTION: After an ITO film having a resistivity of 1×10-3Ω.cm or more is formed in contact with a N-semiconductor layer, etching is given thereto into a predetermined pattern. Then, a coating requiring heat is formed thereon, followed by clean oven heating of the coating requiring heat and the ITO film at the same time to decrease the resistivity of the ITO film to be lower than 1×10-3Ω.cm, thus manufacturing an ITO electrode.</p> |
