| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the process of grinding a semiconductor wafer (rear surface) can be performed easily, even when bump electrodes are formed in a batch at a wafer level. SOLUTION: This method of manufacturing a semiconductor device includes steps of forming Cu posts 12 on the main surface of a semiconductor wafer, coating the main surface of the semiconductor wafer with a resin 13 substantially up to the same height as the Cu posts, forming trenches 17 extending to a prescribed depth in the semiconductor wafer from the resin surface, forming solder balls 18 electrically connected to the Cu posts, stacking a grinding tape 19 on the main surface side of the semiconductor wafer, and grinding the rear surface of the semiconductor wafer. At least, a part of the grinding tape adheres to the resin surface. Holes 19a corresponding to regions, where solder balls are formed on the main surface of the semiconductor wafer, are formed in the grinding tape.
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