发明名称 METHOD FOR FORMING PATTERN FOR MASK
摘要 <p>PURPOSE:To transfer all of plural patterns with high dimensional accuracy by eliminating an effect caused by coma aberration by forming a dummy pattern on both ends of the plural patterns. CONSTITUTION:The direction and the size of the optical system of an exposure device that the coma aberration is generated is measured in respective areas in a field and the direction of the composite vector thereof is defined as the average in-plane direction of the optical system that the coma aberration is generated. In the case that plural line patterns l1 - l5 are formed in directions B - B' within 45 deg. with respect to the average in-plane direction A - A' of the optical system of the exposure device that the coma aberration is generated, the dummy patterns ls and le are formed at both ends of the plural line patterns l1 - l5. Thus, the dimensional accuracy of all patterns which are transferred is improved.</p>
申请公布号 JPH0460547(A) 申请公布日期 1992.02.26
申请号 JP19900169783 申请日期 1990.06.29
申请人 FUJITSU LTD 发明人 TOMINAGA MANABU
分类号 G03F1/68;G03F1/70;H01L21/027 主分类号 G03F1/68
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