METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to maintain a characteristic of a Ta2O5 dielectric layer and to improve a leakage current characteristic, by forming a good-quality WO3 layer on a tungsten storage electrode before the Ta2O5 dielectric layer is formed. CONSTITUTION: A tungsten storage electrode is formed on a substrate(10) having a lower structure. A WO3 layer(100) is formed on the tungsten storage electrode. A Ta2O5 dielectric layer(4) is formed on the WO3 layer. A plate electrode is formed on the Ta2O5 dielectric layer. A cleaning process is performed for 30-50 seconds by using 50:1 HF to eliminate an impurity-containing native oxide layer formed on the tungsten storage electrode before the WO3 layer is formed.