| 摘要 |
<p>PURPOSE:To form a uniform thin film of Si3N4 on the surface of a substrate by supplying a gaseous mixture consisting of an organic compound gas containing Si and amine groups and an NH3 gas or an N2-containing gas into a vacuum tank containing plural substrates and decomposing this gaseous mixture by means of heating, etc. CONSTITUTION:Plural substrates 2, such as semiconductor wafers, are piled up in a tube furnace 1 having a heater 3 on the side wall, and the inside of the furnace is evacuated via an exhaust hole 4. An organic compound gas, such as Si[N(CH3)2]4, having a composition containing Si and amine groups and free from Cl is supplied via an air supply pipe 5 into the furnace, and an organic gas of NH3, etc., containing N and free from Cl, is mixed via an air supply pipe 6 under reduced pressure, and the resulting gaseous mixture is brought into contact with the surface of respective surfaces of the substrates 2 heated by the heater 3. The gaseous mixture is decomposed and allowed to react by heating or by means of forming into plasmic state, radiation excitation, etc., by which an Si3N4 film having uniform thickness is formed on the surface of each substrate 2. Since the raw-material gas is free from Cl in this case, the contamination of the Si3N4 film due to the formation of (NH4)Cl can be prevented.</p> |
