| 摘要 |
<p>PURPOSE: A semiconductor memory device with many laser fuses is provided to reduce size of the device by decreasing the areas and width of laser fuses, and to enhance the confidence and production throughput by increasing vertical gaps of laser fuses and lowering the damage percentage of adjacent laser fuses. CONSTITUTION: In a semiconductor memory device are many laser fuses. Many laser fuses are classified with a first zone, a second zone and fusing zone. One end of many laser fuses is contained in the first zone, the other end is contained in the second zone. In the fusing zone, many fuses are fused, and sloped at predetermined angle to the laser fuses contained in the first and second zones. Thus, the areas and width of fuses are reduced, and the size of the device is decreased.</p> |
