| 摘要 |
PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum oxide. SOLUTION: A device in a chemical vapor deposition(CVD) system monitors the temperature of an actual wafer/substrate 10 during adhering treatment, and forms a high quality aluminum oxide film under real-time wafer/substrate control. In this case, source steam for LPCVD adhering aluminum oxide to a silicon substrate is repeatedly supplied exactly. This device is provided with a heated source substance, a heated transfer passage, heated inert gas discharge passages 21a-21c, pressure difference large flow rate controllers 24 and 28, a control system having a related valve, and a vacuum treatment chamber having a wall which is to be temperature-controlled as a complete source transfer system.
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