| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that more than half of currently employed semiconductor processes are performed by decompressed devices, that a cleaning apparatus and aligner can be used only under atmospheric pressure, and that the interface between the devices operated under atmospheric pressure and those operated under reduced pressure cannot be constituted smoothly which becomes a bottleneck for efficient processes. SOLUTION: Plasma containing high-density radicals is formed linearly by using microwaves and damage-free and high-speed film formation, etching and so forth are performed so as to realize continuous machining of wafers or the like. Load locking becomes unnecessary by operating devices under substantially atmospheric pressure and isolating process spaces or the like by a gas flow. Since processes such as film formation, CVD, etching, planarization, cleaning and so forth can be conducted directly by only switching the gas, majority of processes can be performed under atmospheric pressure, thus enabling efficient processes. |
