| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a pattern to be measured with only one exposure and to make good accuracy measurement, even if the fully occupying area of the pattern for measurement is reduced. SOLUTION: In this pattern measuring method for measuring the relative position between a reference pattern and the pattern to be measured to measure the aberration function of an optical system in an aligner, with a testing mask having a pattern to be measured formed by fine-pitch repeated patterns and reference patterns having a larger line width than the above pattern, which are disposed line-symmetrical on both sides of the pattern to be measured, a projection aligner is used to expose each pattern on a wafer, and then for the respective patterns formed on the wafer, the center position Ac between the reference patterns A1, A2 and the center position of the pattern to be measured except both ends on the wafer are measured by a measuring device, having a wavelength shorter than the exposure wavelength to obtain a difference between the respective center positions.</p> |
