| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a field effect semiconductor device in which lowering of source resistance, increase of gate-drain breakdown strength and kinking are prevented through a simple means. SOLUTION: An i-GaAs buffer layer 22, i-GaAs channel layer 23, an n-AlGaAs carrier supply layer 24 and an n-GaAs cap layer 25 are formed in layers, a recess 25S is made in the n-GaAs cap layer 25 and a source electrode 30S is formed to contact the n-AlGaAs carrier supply layer 24 exposed in the recess 25S while covering at least the gate side completely and to partially contact the n-GaAs cap layer 25 on the outside of the recess 25S while stretching in the direction of the gate.
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