发明名称 TEST PATTERN FOR MEASURING GATE RESISTANCE
摘要 PROBLEM TO BE SOLVED: To provide a test pattern that enable accurate measurement for gate resistance of a semiconductor element. SOLUTION: In a test pattern 5 of a MOSFET, gate pads 1 and 2 are provided on both ends of a gate, respectively, and a gate resistance is measured between both pads 1 and 2.
申请公布号 JP2001093948(A) 申请公布日期 2001.04.06
申请号 JP19990265526 申请日期 1999.09.20
申请人 TOYOTA AUTOM LOOM WORKS LTD 发明人 NONAKA YOSHINORI
分类号 G01R31/26;G01R27/02;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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