METHOD FOR FABRICATING PERFECT FULLY DEPLETION SEPARATION-BY-IMPLANTATION-OXIDE WAFER

摘要

PURPOSE: A method for fabricating a perfect-fully-depletion(PFD) separation-by-implantation-oxide(SIMOX) wafer is provided to improve integration and reliability, by forming the PFD SIMOX wafer which does not have threading dislocation and an agglomeration. treading CONSTITUTION: A single crystal silicon wafer without crystal originated particles(COP) is induced as a substrate, wherein the single crystal silicon wafer does not have a vacancy and an interstitial agglomeration. Oxygen ions of 3.5-4.4 E16/square centimeter are implanted into the substrate to form an oxide layer inside the substrate. The substrate implanted with the oxygen ions are annealed at a temperature of 1200 deg.C in a mixture atmosphere of N2 gas and O2 gas so that the vacancy on the oxide layer is not concentrated on a position and an agglomeration is prevented. An upper surface of the annealed substrate is polished.