| 摘要 |
PROBLEM TO BE SOLVED: To make satisfactory epitaxial growth of a semiconductor layer to take place by suppressing the formation of oxide or mixture of moisture into the semiconductor layer at melting of semiconductor material. SOLUTION: A melted semiconductor material is supplied from a crucible 2 disposed above processing containers 1 for holding their semiconductor wafers W into the containers 1. At melting of a solid semiconductor material in the crucible 2, a processing chamber 5 is evacuated by a vacuum pump 25. As a result, oxide or moisture generated at melting of the semiconductor material is discharged to the outside of the chamber 5. Thereafter, semiconductor layers are epitaxially grown on their semiconductor wafers W within the chamber 5 in purified state. |
