SINGLE ELECTRON TUNNEL DIODE PRODUCED BY USING CONDENSED ION BEAM

摘要

PURPOSE: A single electron tunnel diode produced by using a condensed ion beam is provided to effectively control a thermal fluctuation at room temperature and to improve reliability. CONSTITUTION: After an insulating layer(4) such as SiO2 or MgO is deposited on a silicon substrate(5), an aluminum layer(3) is deposited on the insulating layer(4) and then patterned to form a source electrode(6), a drain electrode(7) and a single electron tunnel junction(2). In particular, the single electron tunnel junction(2) is formed by a nano particle process. In the process, a gallium ion beam is emitted by a condensed ion beam probe(1), and thereby defect is created in the single electron tunnel junction(2). The defect forms a nano island capable of confining electrons and producing a coulomb blockade effect at room temperature as well.