| 摘要 |
PURPOSE: A charge pump circuit is provided to transfer a voltage by a high voltage gain without voltage drop by controlling a PMOS transistor as a charge pump element using a control voltage swinging from a ground voltage to a drain voltage. CONSTITUTION: A high voltage generating circuit consists of charge pump circuits(20,22,24) connected between an internal voltage terminal(VCC) and a high voltage terminal(VPP). Each of the charge pump circuits(20,22,24) consists of a PMOS transistor(M4), a capacitor(C1/2/3) and a level shifter(LS1/2/3). The level shifter in each charge pump circuit(20,22,24) responds to a control signal(OSC) to generate a control voltage which swings from a ground voltage(VSS) to a voltage of an output terminal. The charge pump circuits(20,24) are supplied with the control signal(OSC), and the charge pump circuit(22) is supplied with an inverted version of the control signal(OSCB)
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