| 摘要 |
PURPOSE: A nonvolatile ferroelectric memory device having a row redundancy circuit suitable for efficiently laying out a relief circuit and method for relieving a fail address of the memory device are provided to increase relief efficiency when a fail is generated in a row address of a main cell area. CONSTITUTION: The memory device includes a main cell area, a main word line driver(50), a redundancy cell area, a row redundancy driving circuit portion(56) and a local X decoder portion(55). The main cell area is consisted of first and second cell array portions(51,54) consisted of a plurality of cell arrays and first and second local word line driver portions(52,53) which is arranged between the first and second cell array portions and outputs a signal for driving any cell of the first and second cell array portions. The main word line driver outputs a control signal for activating one of the first and second local word line driver portions of the main cell area. The redundancy cell area is consisted of first and second redundancy cell array portions(51b,54b), which relieve an operational error when the error is generated in an operation selecting a row address of the main cell area and of which a basic composition is the same as the main cell area, and first and second redundancy local word line driver portions(52b,53b). The row redundancy driving circuit portion outputs an inactivated signal to the main word line driver when a fail is generated in an operation selecting a row address of the main cell area, and a control signal to the first and second redundancy local word line driver portions of the redundancy cell area. The local X decoder portion applies a driving signal to be applied first and second split word lines corresponding to any cell of the main cell area and the redundancy cell area to the main cell area or the first and second local word line driver portions of the redundancy cell area.
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