| 摘要 |
PURPOSE: A thin film transistor substrate is provided to be capable of improving a fabrication yield together with securing an aperture ratio, of minimizing a parasitic capacitance, and of sufficiently securing a sustain capacitance. CONSTITUTION: A data wire includes a data line(20) extended in one direction on an insulation substrate, and RGB color filters(31,32,33) are formed at each pixel on an insulation substrate. The insulation film is formed to cover the data wire and the color filters. A gate wire is formed on the insulation film and includes a gate line(50), which is intersected with the data line(20) so as to define the pixel, and a gate electrode being a branch of the gate line. A gate insulation film is formed on the insulation film to cover the gate wire and has a contact hole(61) for exposing a part of the data line together with the insulation film. A semiconductor layer pattern(70) is formed on the gate insulation film of the gate electrode and has an island shape. An ohmic contact layer pattern is formed on the semiconductor layer pattern. A pixel wire includes a source electrode(112), a drain electrode(111) and a pixel electrode(110) and is formed on the ohmic contact layer pattern. The source electrode(112) is connected to the data line(20) through the contact hole(61). The drain electrode(111) is separated from the source electrode with the gate electrode in the center. The pixel electrode(110) is connected to the drain electrode and is formed at the pixel.
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