| 摘要 |
PURPOSE: A nonvolatile ferroelectric memory device is provided to simplify a layout process of a ferroelectric capacitor, by forming the ferroelectric capacitor in a semiconductor substrate while using a trench structure. CONSTITUTION: An active region is defined by an isolation layer(102) in a semiconductor substrate(101). A ferroelectric capacitor composed of a storage electrode(104a), a ferroelectric layer(105) and a plate electrode(106a) is installed in a trench which is formed by etching the semiconductor substrate by a predetermined depth. The first split word line(108) has the same width as the plate electrode, contacting the plate electrode. The second split word line(109) is formed on the substrate by intervening the first insulating layer(107), separated from the first split word line by a predetermined interval. A source region(110a) is formed on the surface of the substrate in one side of the second split word line, electrically connected to the storage electrode. A drain region(110b) is formed on the surface of the substrate in the other side of the second split word line. The second insulating layer(111) is formed on the entire surface including the first and second split word lines. A plug layer(112) penetrates the second insulating layer to be electrically connected to the drain region. A bit line(113) is formed in a direction intersecting the first and second split word lines, electrically connected to the plug layer.
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