ELECTRODE STRUCTURE FOR PROCESS CHAMBER OF APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: An electrode structure for a process chamber of an apparatus for manufacturing a semiconductor device is provided to perform a process in a stable plasma state, by preventing loss of radio frequency power in a process apparatus. CONSTITUTION: Matched power from radio frequency power is supplied to a cathode constituting a process chamber. A cooling induction path through which a cooling material is circulated is installed inside the cathode. The inside of the cooling induction path is coated with an oxide layer.