METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to maximize a merit of Al2O3 and improve a leakage current characteristic of the capacitor, by forming a more stable Al2O3 dielectric layer, and by fabricating an Al2O3 capacitor of a metal-insulator-metal(MLM) structure using tungsten as a storage electrode. CONSTITUTION: A tungsten storage electrode is formed on a substrate(10) having a lower structure. After an Al2O3 layer is deposited on the tungsten storage electrode by an atomic layer epitaxial method, an Al2O3 dielectric layer(4) is formed by a plasma process using N2O gas or mixed gas of O2 gas and N2 gas and by a heat treatment process in an N2 gas atmosphere. A plate electrode is formed on the Al2O3 dielectric layer.