| 摘要 |
PROBLEM TO BE SOLVED: To readily inspect pattern data with a small number of processes. SOLUTION: A positive resist layer 2 formed on a wafer 1 is subjected to exposure with light by using a mask, having a required pattern to transfer the pattern onto the positive resist layer 2. The positive resist layer 2 is exposed to an electron beam 3 according to the data of a pattern, whose electron beam 3 exposure region agrees with the light shielding region of the light exposure to transfer the pattern onto the positive resist layer 2. The positive resist layer 2 subjected to the light exposure and the electron beam exposure is developed, and by inspecting the positive resist remaining on the wafer 1 inspected test the pattern data are inspected.
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