| 摘要 |
PROBLEM TO BE SOLVED: To lower the resistance of an element by increasing the density of the channel region. SOLUTION: The array ratio between trench gates 18 and source contacts 24 is adjusted to 4:1. Namely, one source contact 24 is arranged to four trench gates 18. Of the trench gates 18, one end sections of the trench gates 18a arranged on the left side of each source contact 24 are connected to each other, and the other end sections of the gates 18a are opened to each other. In the opened section, the source region of each gate 18a is connected to the source contact 24 via a source connecting region 26.
|
