| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of bonding SOI wafers to be bonded, capable of easily preventing generation of voids in the wafer without damaging the surfaces of the wafers. SOLUTION: Wafers 1, 2 are leaned on both side walls 6 of a depressed portion 5, which is made in a holding base 11 and nearly shaped like a letter V in cross section and in which wafers are inserted, with surfaces 1A, 2A to be bonded of wafers 1, 2 counter to each other and with orientation flats 3, 4 faced down, and then the tips 9 of wafer pressing members 8 inserted into a passage 7 are pressed onto the wafers 1, 2 to position only the orientation flats 3, 4 to put them into contact with each other. Then, one position formed by the orientation flats 3, 4 is pressed at one contact point on both sides across the counter surfaces of the wafers 1, 2 by the tips 9 of the pressing members 8, each of which is to be one contact point, and thereafter the remaining conuter surfaces of the wafers 1, 2 are bonded to each other by sequentially putting them into contact with each other from the portion formed by the orientation flats 3, 4 to the other end.
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