| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-oscillating type semiconductor laser, which can maintain its self-oscillation operation, until its self-oscillating operating temperature reaches high temperature. SOLUTION: In a self-oscillating type semiconductor laser having a mesa stripe, carrier concentration in a p-type first clad layer adjacent to an active layer under the mesa stripe and the carrier concentration in a p-type second mesa-striped clad layer provided over the p-type first clad layer are respectively set at a concentration of 1 to 4.5×1017 cm-3 and a concentration of 5×1017 cm-3 or higher, whereby the range of the self-oscillating operation temperature of the laser is expanded.
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