| 摘要 |
PROBLEM TO BE SOLVED: To provide an edge non-injecting type window-structure semiconductor laser in which the diffusion of Zn from a p-type clad layer to an active layer can be suppressed, and a method for manufacturing the laser. SOLUTION: Since it becomes possible to form a window area at a lower temperature than the conventional example by utilizing a 'blocking effect' and an 'extruding effect' by laminating a semiconductor layer doped with Si, etc., on another semiconductor layer containing an impurity for forming a window structure, the diffusion and intrusion of an impurity from a p-type clad layer to an active layer can be prevented. In addition, when a semiconductor laser is formed by leaving the semiconductor layer containing the impurity for forming window structure and the semiconductor layer doped with Si, etc., as they are, a reliable current non-injecting effect can be obtained in addition to the above-mentioned effect. Consequently, a high-output high-performance semiconductor laser, in which the occurrence of COD is significantly suppressed, can be realized.
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