| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need for external element for adjustment, reduce test costs, and reduce consumption power and chip area by adjusting a reference potential with low power supply potential dependency and low-temperature dependency which are generated in a semiconductor device by external control or automatically after power is turned on, so that the potential becomes a value for reducing the influence of the scattering of a used element. SOLUTION: There are provided a first reference potential generation circuit 10 and a second reference potential generation circuit 20 with different characteristics, a control circuit 30 for controlling a normal operation state and the other special operation states, and a reference potential adjustment circuit 40 that is controlled by the control circuit, refers to the output potential of the second reference potential generation circuit in the special operation state for adjusting the output potential of the first reference potential generation circuit for outputting, and outputs the output potential of the first reference potential generation circuit in the normal operation state.
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