METHOD FOR INSPECTING DEFECT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for inspecting a defect of a semiconductor device is provided to differentiate a crystal oriented pit(COP) and a particle from a detected signal, by performing an analysis regarding a defect existing under the surface of a substrate regardless of an analysis regarding a defect existing on the surface of the substrate. CONSTITUTION: An image of a semiconductor substrate is scanned by using a beam to detect a reflected beam. A signal-processed signal is generated by using the detected reflected beam so that a portion regarding a defect existing under the surface of the semiconductor substrate has a minus size and a portion regarding a defect existing on the surface of the semiconductor substrate has a plus size. The signal-processes signal is analyzed by using a dual threshold which is a standard regarding the portions of the established plus and minus sizes so that the defect existing under the surface of the substrate and the detect existing on the surface of the substrate are separately detected and classified.