| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method which can form a satisfactory resist pattern and improve the dry-etching resistance of the pattern significantly, while maintaining a high sensitivity and a high resolution. SOLUTION: After a resist layer made of positive photosensitive resin composition is subjected to pattern exposure, the resist layer is subjected to alkali development to form a resist pattern. Before, at the time of or after the pattern exposure, at least the parts of the resist layer which are essentially nonexposed parts and in which the photosensitive resin composition remains are lightly exposed and the low molecular weight components of the alkali-soluble resin of the photosensitive resin composition in the parts are positively dissolved. With this constitution, surface layers difficult to dissolve with relatively high molecular weights are formed, so that the resist pattern with the improved dry-etching resistance can be formed. |
