| 摘要 |
PROBLEM TO BE SOLVED: To provide a small and high-reliability semiconductor device with a high-breakdown voltage MOS transistor and a low-voltage drive MOS transistor, and its manufacturing method. SOLUTION: LDD regions 114 and 124 are formed by forming a gate electrode 112 of a high-breakdown voltage MOS transistor 112 and a gate electrode 122 of a low-voltage drive MOS transistor and implanting impurities by using the gate electrodes 112 and 122 as masks. After that, an insulating film 202 is formed, in such a way that it covers the gate electrode 112. Then after forming an insulating film 203, sidewalls 123 ad thick sidewalls 113 are formed by an anisotropic etching of the insulating films 202 and 204. Then source-drain regions 115 and 125 are formed by implanting impurities using the sidewalls 113 and 123 as masks.
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