| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low-cost and high-performance semiconductor integrated circuit and its manufacturing method by preventing production of drum shapes in a second insulating layer which insulates conductive layers, by etching in lateral direction in a multilayer wiring construction in which layers including conductive layers as wiring are formed in multilayer, by interposing a first insulating layer made mainly of organic polymer film. SOLUTION: In this semiconductor integrated circuit, a first insulating film 26 comprises an organic polymer film 1a and a silicon nitride film 2a, and a second insulating layer 27 comprises a silicon polymer film 3 and a silicon nitride film 2b. Also, preferably, the second insulating layer 27 includes a silicon oxide film for improving the mechanical strength.
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