| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer with smooth surfaces and a method of manufacturing such a silicon wafer, where the formation of particles is suppressed. SOLUTION: A silicon wafer 1 is subjected to a lapping step and an alkali etching step, after which the wafer 1 is subjected to a deposition step, wherein a wafer smoothing layer 2 is deposited on one of its surfaces, and then subjected to a mirror-finished surface step, where the other surface of the wafer 1 is mirror-surface finished. The layer 2 is preferably a polysilicon layer deposited by a CVD method, whereby fine asperities on the surface of the wafer 1 resulting from the alkali etching step are filled to obtain a planarized surface and to prevent the formation of particles in subsequent steps. The mirror-surface finished surface also allows the wafer 1 to be obtained, where the formation of particles is suppressed.
|
