发明名称 SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A method for manufacturing a semiconductor device having a self-aligned contact is provided to increase align margin of a photolithography process by self-aligning a width of a contact formed between a conductive region and a conductive line by a line width of the conductive line. CONSTITUTION: A conductive region(31) is formed on a semiconductor substrate(30). The first interlayer dielectric(32) is formed on the entire semiconductor substrate having the conductive region. A conductive line to be connected to the conductive region is formed on the first interlayer dielectric. The second interlayer dielectric(36) is formed on the conductive line. The first interlayer dielectric, the conductive line and the second interlayer dielectric formed on the conductive region are eliminated to form a contact hole(42) exposing the conductive region. A conductive material is filled in the contact hole to connect the conductive line with the conductive region.
申请公布号 KR20010027865(A) 申请公布日期 2001.04.06
申请号 KR19990039837 申请日期 1999.09.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, HYEON JAE;KIM, IN SEONG;LEE, JUNG HYEON;PARK, JUN SU
分类号 H01L21/768;H01L21/283;H01L21/3213;H01L21/4763;H01L21/60;(IPC1-7):H01L21/283 主分类号 H01L21/768
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