发明名称 LIGHT TRANSMITTANCE CONTROL RETICLE AND DEVELOPING METHOD FOR PHOTOSENSITIVE MATERIAL USING SAME
摘要 PURPOSE: A light transmittance control reticle capable of controlling light transmittance by inserting a light transmittance auxiliary pattern film having a specified light transmittance into between a mask disk and a chromium film and method for controlling the developing depth of photosensitivity fixing materials deposited on a semiconductor are provided which prevent cracks caused by stress in succeeding thermal processes. CONSTITUTION: In a reticle used for light transmittance by laminating a chromium film on the upper surface of a mask disk (10) and etching with photosensitive patterns, a light transmittance auxiliary pattern film (20) having a specified light transmittance is inserted into between the mask disk and the chromium film (30) to control light transmittance, wherein the light transmittance auxiliary pattern film has the formula: CrOxNy and a transmittance of 50 to 70%. Photosensitivity fixing materials (70) as polyimide are deposited on a semiconductor substrate and have a thickness of 7 to 12 micrometer.
申请公布号 KR20010025764(A) 申请公布日期 2001.04.06
申请号 KR19980062449 申请日期 1998.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HAN, MIN SEOP;KIM, HA YEONG;SONG, JEONG HO
分类号 G03F1/62;G03F1/54 主分类号 G03F1/62
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