发明名称 |
LIGHT TRANSMITTANCE CONTROL RETICLE AND DEVELOPING METHOD FOR PHOTOSENSITIVE MATERIAL USING SAME |
摘要 |
PURPOSE: A light transmittance control reticle capable of controlling light transmittance by inserting a light transmittance auxiliary pattern film having a specified light transmittance into between a mask disk and a chromium film and method for controlling the developing depth of photosensitivity fixing materials deposited on a semiconductor are provided which prevent cracks caused by stress in succeeding thermal processes. CONSTITUTION: In a reticle used for light transmittance by laminating a chromium film on the upper surface of a mask disk (10) and etching with photosensitive patterns, a light transmittance auxiliary pattern film (20) having a specified light transmittance is inserted into between the mask disk and the chromium film (30) to control light transmittance, wherein the light transmittance auxiliary pattern film has the formula: CrOxNy and a transmittance of 50 to 70%. Photosensitivity fixing materials (70) as polyimide are deposited on a semiconductor substrate and have a thickness of 7 to 12 micrometer. |
申请公布号 |
KR20010025764(A) |
申请公布日期 |
2001.04.06 |
申请号 |
KR19980062449 |
申请日期 |
1998.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HAN, MIN SEOP;KIM, HA YEONG;SONG, JEONG HO |
分类号 |
G03F1/62;G03F1/54 |
主分类号 |
G03F1/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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