发明名称 |
FIELD EMISSION ARRAY WITH METAL SILICIDE TIP AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A field emission array with a metal silicide tip and a method for manufacturing the same are provided to form a metal silicide tip by depositing a silicon on a metal field emission tip. CONSTITUTION: A field emission array with a metal silicide tip and a method for manufacturing the same comprises a conductive substrate(11), an insulating layer(12), a metal layer(13), a cavity portion(20), and a cone-shaped metal tip(16). The insulating layer(12) is formed on the conductive substrate(11). The metal layer(13) is covers the insulating layer(12). The cavity portion(20) is formed between the insulating layer(12) and the metal layer(13). The cone-shaped metal layer(16) is formed at the cavity portion(20). A metal silicide portion is formed at the cone-shaped metal tip(16).
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申请公布号 |
KR20010026448(A) |
申请公布日期 |
2001.04.06 |
申请号 |
KR19990037771 |
申请日期 |
1999.09.07 |
申请人 |
KOREA INFORMATION & COMMUNICATIONS CO., LTD.;LEE, JONG DUK |
发明人 |
LEE, JONG DUK |
分类号 |
H01J1/30;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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