| 摘要 |
PURPOSE: To provide a composition for polishing capable of polishing a tantalum-containing compound at a high polishing rate and scarcely corroding the copper surface after polishing and to provide a method of polishing by which a dishing can be suppressed. CONSTITUTION: This composition for polishing comprises an abrasive material oxalic acid an ethylenediamine derivative, a benzotriazole derivative and water without containing an oxidizing agent. Furthermore, the composition for polishing comprises the abrasive material, oxalic acid, ethylenediamine derivative, benzotriazole derivative, water and hydrogen peroxide. The method of polishing for forming copper wirings relates to the production of semiconductor devices and comprises polishing and removing all the copper film to be removed with the composition for polishing containing the hydrogen peroxide as a second polishing step and polishing and removing all the barrier film to be removed with the composition for polishing without containing the hydrogen peroxide as a third polishing step in the method of polishing comprising completing the polishing just prior to reaching the barrier film and leaving a small quantity of the copper film in a first polishing step and then polishing the remaining copper film and the barrier film in the second and third polishing steps. |
