METHOD FOR MANUFACTURING VIA CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a via contact of a semiconductor device is provided to improve an entire etching rate and to eliminate a bowing profile and a stopping profile in flowable oxide, by using C4F8/Ar/O2/N2 as etchant for etching the flowable oxide and tetra-ethyl-ortho-silicate(TEOS). CONSTITUTION: An interlayer dielectric having a superior dielectric characteristic is formed on a lower conductive layer having a capping layer(102). A via contact hole for a via contact(116) is formed in a predetermined region of the interlayer dielectric by using etchant having a high etching rate regarding the interlayer dielectric. A conductive material is filled in the via contact hole.