| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress a defect of a thin film capacitance element integrally formed at the same time as a bottom gate type thin film transistor is formed. SOLUTION: In this semiconductor device, thin film transistor elements TFT and thin film capacitance elements Cs are formed on a substrate. The thin film transistor element TFT has a laminated structure consisting of a gate electrode G formed on the substrate, an insulating film formed on the gate electrode, and a semiconductor thin film 3 formed on the insulating film. The thin film capacitance element Cs has the laminated structure consisting of a lower electrode LE formed on the substrate including a step ST, the insulating film formed on the lower electrode, and an upper electrode UE formed on the insulating film. The upper electrode UE consists of the semiconductor film 3 extended form the thin film transistor element TFT as if it got over the step ST of the lower electrode LE, and a pattern dimension PW of a part getting over the step ST is set to 5μm or less. This arrangement limits the getting-over part CT where defects occur frequently.</p> |
