METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR MULTILAYER FILM

摘要

PROBLEM TO BE SOLVED: To provide satisfactory yield and productivity manufacturing method of a compound semiconductor multilayer thin film for preventing mingling of As in a P-based compound thin film that is grown as an etching stopper layer. SOLUTION: A P-based compound thin film as an etching stopper layer 8 is formed on the upper hetero-interface side of an As-based compound semiconductor thin film in multilayers on a semi-insulating GaAs substrate 1, when a compound semiconductor multilayer thin film is formed in a manufacturing method. In this case, one or more steps for supplying only P-material are provided in the whole steps of growing the etching stopper layer 8.