ELECTRON BEAM LITHOGRAPHY SYSTEM

摘要

PROBLEM TO BE SOLVED: To realize high precision transfer of the transfer mask of an electron beam lithographer to an aperture by a transfer mask stage, when the transfer mask is replaced. SOLUTION: The real shape of an aperture on a transfer mask is measured by a beam current or a reflection electron signal which is generated when an electron beam applied to the circumference of the aperture and compared with a design shape. Rotation, magnification error and misregistration deviation of the transfer mask are calculated from the comparison result.