| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device comprising LDD type MOSFETs having a metal silicide and exhibiting high driving force in which short channel effect is suppressed. SOLUTION: In a method for fabricating an MOSFET in which ion implantation and activation for forming a deep diffusion layer serving as source or drain are carried out at first and then a shallow junction is formed, a first sidewall 12 is formed of a multilayer insulation film of a post oxide film 7, a nitride film 9 and an oxide film 11. It is then used as a mask for forming a gate electrode 5 and a deep diffusion layer 13 in the gate polysilicon 5', source and drain regions by implanting ions and annealing. Subsequently, the oxide film 11 is removed by isotropic etching and a metal silicide 15 is formed on the surface of the gate electrode 5, the source region and the drain region. Thereafter, the nitride film 9 and the post oxide film 7 are removed from the peripheral region of the gate electrode 5 by anisotropic etching, a second sidewall 17 is formed, ions are implanted into the exposed surface of a substrate 1 and then a nitride film is formed on the entire surface and a shallow diffusion layer 19 is formed by annealing.
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