| 摘要 |
PROBLEM TO BE SOLVED: To provide an end point detecting method, in which the etching end point is rapidly detected by using an interlayer insulating film having a novel structure when the interlayer insulating film is etched, so that embedded wiring is formed in a semiconductor substrate. SOLUTION: An interlayer insulating film is constituted by an upper portion 3 which is to be etched and a lower portion 4 which is not to be etched. An etching end point can be detected by a change in light emitted from an etching product, when the upper portion 3 is etched and the lower portion 4 is exposed. To obtain this change in light, either a thin surface layer containing much C and O can be formed on a surface of the lower portion of the interlayer insulating film, or a modified layer containing much C and O can be formed in the surface of the lower portion. As a result, at partial etching, reaction products between the upper portion and lower portion change and detection can become easy due to the light emission. Therefore, the etching depth can be controlled in situ.
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