发明名称 |
ETCHING CHAMBER FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
PURPOSE: An etching chamber for manufacturing a semiconductor is provided to prevent a wafer from being contaminated by particles in a subsequent etching process and to extend a lifetime of the chamber, by preventing the particles from being adhered to a wall of the chamber by a liner, and by preventing the particles from being adhered to the liner by using a heating coil. CONSTITUTION: A wafer settled in an electrostatic chuck(12) is etched in a plasma state. A liner(100) for preventing particles is installed between the electrostatic chuck and an inner wall of an etching chamber(10), composed of a quartz material. A heating coil is formed in the liner for preventing particles.
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申请公布号 |
KR20010027950(A) |
申请公布日期 |
2001.04.06 |
申请号 |
KR19990039938 |
申请日期 |
1999.09.16 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
KIM, MAN CHEOL |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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