发明名称 ETCHING CHAMBER FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: An etching chamber for manufacturing a semiconductor is provided to prevent a wafer from being contaminated by particles in a subsequent etching process and to extend a lifetime of the chamber, by preventing the particles from being adhered to a wall of the chamber by a liner, and by preventing the particles from being adhered to the liner by using a heating coil. CONSTITUTION: A wafer settled in an electrostatic chuck(12) is etched in a plasma state. A liner(100) for preventing particles is installed between the electrostatic chuck and an inner wall of an etching chamber(10), composed of a quartz material. A heating coil is formed in the liner for preventing particles.
申请公布号 KR20010027950(A) 申请公布日期 2001.04.06
申请号 KR19990039938 申请日期 1999.09.16
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 KIM, MAN CHEOL
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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