发明名称 RECTANGULAR WAVEGUIDE WITH HIGH IMPEDANCE WALL STRUCTURE
摘要 <p>An improved waveguide wall structure (30) and improved waveguide (60, 70, 80) using the new wall structure as the interior walls of the waveguide. The wall structure (30) comprises a sheet of dielectric material (32), a series of parallel conductive strips (34) on one side of the dielectric material (32) and a layer of conductive material (38) on the other side. Multiple conductive vias (39) are also included through the dielectric material (32) and between the conductive layer (38) and conductive strips (34). The new wall structure (30) presents as a series of parallel L-C circuits to a transverse E field at resonant frequency, resulting in a high impedance surface. The wall structure (30) can be used in waveguides (37, 60, 70, 80) that transmit a signal in one polarization or signals that are cross polarized. The new waveguide (60, 70, 80) maintains a near uniform density E field and H field component, resulting in near uniform signal power density across the waveguide cross section.</p>
申请公布号 WO2001024313(A1) 申请公布日期 2001.04.05
申请号 US2000027046 申请日期 2000.09.29
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