| 摘要 |
<p>The present invention relates to a technique for forming a p-type semiconductor crystalline layer of III-group element nitride, having a low resistivity in an as grown state. The method comprising the steps of firstly depositing, with vapor growth at a first growth temperature (=T1), a semiconductor crystalline layer of III-group element nitride added with a II-group element, onto an n-type semiconductor crystalline layer of III-group element nitride accumulated on a crystalline substrate; subsequent to said first depositing step, secondly depositing, with vapor growth at a second growth temperature (=T2), an n-type semiconductor crystalline layer of III-group element nitride, joiningly onto said semiconductor crystalline layer of III-group element nitride added with said II-group element; after completion of said second depositing step, thirdly lowering a temperature from said second growth temperature (=T2), under a state that said n-type semiconductor crystalline layer of III-group element nitride formed by said second depositing step is laminated on said semiconductor crystalline layer of III-group element nitride added with said II-group element which layer has been vapor grown by said first deposition step; and via said first through third steps, forming a p-type semiconductor crystalline layer of III-group element nitride from said semiconductor crystalline layer of III-group element nitride added with said II-group element, the latter layer having been vapor grown by said second deposition step.</p> |
