| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an organic thin-film transistor, having high mobility by controlling the state of crystallization of a pentacene vapor-deposited film. SOLUTION: An organic semiconductor device is constituted by successively forming a gate electrode, gate insulating layer, organic semiconductor layer, source electrode/drain electrode, and protective layer on the surface of a substrate. The contact angle of the surface of the gate insulating layer in pure water is adjusted to 50 deg.-120 deg..</p> |
