发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small element area and can suppress damages caused by wire bonding, and a method for manufactur ing the device. SOLUTION: In a semiconductor device, an n+-type drain diffusion areas 4 which is formed as an impurity diffusion layer is formed in the n-type silicon layer (silicon active layer) of an SOI substrate constituted by forming the silicon layer 3 on a single-crystal silicon substrate 1 through a silicon oxide insulating layer 2. The surface-side part of the portion overlapping the diffusion area 4 of a drain electrode 7 constituting metallic wiring becomes a drain pad 17 serving as a bonding pad. An impact relieving section 9 composed of a silicon oxide film is provided between the drain pad 17 and the diffusion area 4 so as to relieve the impact given to the diffusion area 4 at the time of performing wire bonding. The impact relieving section 9 is formed on the portion overlapping the drain pad 17 of the diffusion area 4.
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申请公布号 |
JP2001093908(A) |
申请公布日期 |
2001.04.06 |
申请号 |
JP19990271522 |
申请日期 |
1999.09.27 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
OGIWARA ATSUSHI;OKA NAOMASA |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/320 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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