| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device the size of which can be reduced by arranging a wiring layer and an insulating layer under an electrode for power supply and signal and a method for manufacturing the device. SOLUTION: In a semiconductor device in which an electrode 1 for power supply and signal provided in the uppermost portion of a single-crystal silicon substrate 3 and a lead frame are connected to each other through thin metallic wires 2, the upper surfaces of all insulating layers formed between the substrate 3 and electrode 1 are flattened. In addition, a flat layer wiring layer having a size equivalent to that of the electrode 1 is formed in a grid between the substrate 3 and electrode 1. It is also possible to form an element, such as the transistor, etc., in the surface layer section of the substrate 3 between the substrate 3 and electrode 1.</p> |
