APPARATUS FOR MEASURING STATE OF SAMPLE SURFACE WITH ELECTRON BEAM

摘要

PURPOSE:To make it possible to measure the pattern of the irregularities of the surface of a sample accurately even if there is difference in intensity of electrons discharged from a constituent element and the change in incident electron beam. CONSTITUTION:An electron beam which is discharged from a sample 2 in the symmetrical direction with respect to the normal line of the sample when an electron beam 1 is applied on the surface of a sample 2 is detected. The difference between the detected signals is corrected by dividing or multiplying the difference with the sum of the detected signals or the absorbed current value of the sample. The amount of change in incident electron beam is detected, and the signal of the difference or the sum of the detected signals is corrected. It is not necessary to coat the sample surface with a single metal. It is not necessary to fix the amount of the incident electron beam at the sample surface. The effect of the change in amount of the incident electron beam is eliminated. Thus, the pattern of the irregularities of the surface, the image of the constituent element and the distribution of the amount of the incident electron beams can be obtained.