发明名称 PROJECTION EXPOSURE METHOD AND APPARATUS AND PROJECTION OPTICAL SYSTEM
摘要 <p>A refraction projection optical system preferable to a projection exposure apparatus used for lithography process in manufacturing a microdevice such as a semiconductor device. The projection optical system includes a positive front lens group (GF), an aperture stop (AS), and a positive rear lens group (GR), is a both side telecentric optical system, and satisfies the inequalities 0.065&lt;f2/L&lt;0.125 where f2 is the focal length of the rear lens group (GR) and L is the conjugate distance. The projection optical system includes one or more aspherical surfaces (ASP1 to ASP6).</p>
申请公布号 WO2001023934(P1) 申请公布日期 2001.04.05
申请号 JP1999006387 申请日期 1999.11.16
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址