发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INSPECTION
摘要 [Problems to be Solved] By a probe of a conventional semiconductor inspection device, it is difficult due to accuracy of a probe or the like to inspect all of semiconductor devices at a time with a plurality of probes. [Solution] A method of manufacturing a semiconductor device comprising a step of forming a coating film on the surface of a silicon substrate and forming a plurality of pyramidal or conical probes by etching after patterning by photolithography (FR), a step of removing the coating film, forming another coating film on the surface of the silicon substrate again, and forming a beam or diaphragm for every probe by etching after patterning by FR, a step of removing the coating film, forming another coating film on the surface of the silicon substrate again, and forming through holes by etching after patterning by FR, and a step of removing the coating film, forming an insulating coating film on the surface of the silicon substrate, forming a metallic coating film on the surface of the insulating coating film, and forming interconnection by etching after patterning by FR.
申请公布号 WO0123898(A1) 申请公布日期 2001.04.05
申请号 WO2000JP06563 申请日期 2000.09.25
申请人 HITACHI, LTD. 发明人 KOHNO, RYUJI;MIURA, HIDEO;ENDO, YOSHISHIGE;KANAMARU, MASATOSHI;HOSOGANE, ATSUSHI;AOKI, HIDEYUKI;BAN, NAOTO
分类号 G01R1/067;G01R1/073;G01R3/00;H01L21/66;H01L23/13;H01L23/58;(IPC1-7):G01R1/073;B81C1/00;H01L21/302 主分类号 G01R1/067
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