摘要 |
[Problems to be Solved] By a probe of a conventional semiconductor inspection device, it is difficult due to accuracy of a probe or the like to inspect all of semiconductor devices at a time with a plurality of probes. [Solution] A method of manufacturing a semiconductor device comprising a step of forming a coating film on the surface of a silicon substrate and forming a plurality of pyramidal or conical probes by etching after patterning by photolithography (FR), a step of removing the coating film, forming another coating film on the surface of the silicon substrate again, and forming a beam or diaphragm for every probe by etching after patterning by FR, a step of removing the coating film, forming another coating film on the surface of the silicon substrate again, and forming through holes by etching after patterning by FR, and a step of removing the coating film, forming an insulating coating film on the surface of the silicon substrate, forming a metallic coating film on the surface of the insulating coating film, and forming interconnection by etching after patterning by FR. |
申请人 |
HITACHI, LTD. |
发明人 |
KOHNO, RYUJI;MIURA, HIDEO;ENDO, YOSHISHIGE;KANAMARU, MASATOSHI;HOSOGANE, ATSUSHI;AOKI, HIDEYUKI;BAN, NAOTO |